Physics-informed surrogate models one-dimensional p-n junction diodes
Original title: A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes
Median L1 error is 0.11% on potential and 1.5% and 0.61% on carrier densities.
The paper presents an uncertainty-aware physics-informed surrogate for a one-dimensional p-n junction diode, conditioned on device length, doping, and bias. Predicted internal state is used for terminal current, depletion width, peak field, and stored charge. Benchmarks indicate the formalism can extend to asymmetric junctions and two-dimensional diodes. An uncertainty analysis checks whether answers stay inside a user-specified tolerance.
- The reported surrogate targets a one-dimensional symmetric junction.
- Quantities include terminal current, depletion width, peak field, and stored charge.
- Median L1 error is 0.11% on electrostatic potential.
- Electron and hole density median L1 errors are 1.5% and 0.61%.
From the original article
1 min read at arxiv.orgWe develop an uncertainty-aware physics-informed surrogate for a one-dimensional $p$-$n$ junction diode, conditioned on device length, doping and bias. Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge.
By Suchita Kulkarni · arxiv.org
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